KU047N08P fet equivalent, n-ch trench mos fet.
VDSS= 75V, ID= 130A Drain-Source ON Resistance : RDS(ON)=4.7m (Max.) @VGS = 10V
D N N A
KU047N08P
N-ch Trench MOS FET
O C F
E
G B Q
DIM MILLIMETERS _ 0.2 9.9 + A B C.
FEATURES
VDSS= 75V, ID= 130A Drain-Source ON Resistance : RDS(ON)=4.7m (Max.) @VGS = 10V
D N N A
KU047N08P
N-ch Trench .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery .
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