KTB1369 - EPITAXIAL PLANAR PNP TRANSISTOR

KEC

Key Features

High Breakdown Voltage : VCEO=-180V(Min. ) High Transition Frequency : fT=100MHz(Typ. ) High Current : IC(max)=-2A. Complementary to KTD2061.

KTB1369 epitaxial planar pnp transistor by KEC - Datasheet Preview

Datasheet Details

Part number	KTB1369
Manufacturer	KEC
File Size	438.29 KB
Description	EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet	KTB1369 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
KTB1369	Silicon PNP Power Transistors	Inchange Semiconductor

Other Datasheets by KEC

Part Number	Description
KTB1366	TRIPLE DIFFUSED PNP TRANSISTOR
KTB1367	TRIPLE DIFFUSED PNP TRANSISTOR
KTB1368	TRIPLE DIFFUSED PNP TRANSISTOR
KTB1370	TRIPLE DIFFUSED PNP TRANSISTOR
KTB1124	EPITAXIAL PLANAR PNP TRANSISTOR
KTB1151	EPITAXIAL PLANAR PNP TRANSISTOR
KTB1234T	EPITAXIAL PLANAR PNP TRANSISTOR
KTB1241	EPITAXIAL PLANAR PNP TRANSISTOR
KTB1260	EPITAXIAL PLANAR PNP TRANSISTOR
KTB1423	EPITAXIAL PLANAR PNP TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SEMICONDUCTOR TECHNICAL DATA KTB1369 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION DRIVER STAGE APPLICATION COROR TV CLASS B SOUND OUTPUT APPLICATION FEATURES High Breakdown Voltage : VCEO=-180V(Min.) High Transition Frequency : fT=100MHz(Typ.) High Current : IC(max)=-2A. Complementary to KTD2061. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -200 -180 -5 -2 -0.2 20 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.