KP11N60D mosfet equivalent, n-channel mosfet.
VDSS=600V, ID=11A Drain-Source ON Resistance :
G H
KP11N60D
N CHANNEL MOS FIELD EFFECT TRANSISTOR
A C
K D L
B
J
E N
RDS(ON)(Max)=0.38 Qg(typ.)= 20nC
@VGS=10V
F
.
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
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