KP11N60F mosfet equivalent, n-channel mosfet.
VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 Qg(typ.)= 20nC @VGS=10V
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MILLIMETERS
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MAXIMUM RATING (Tc=25
CHARACTERIS.
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KP11N60F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
C
F
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active p.
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