KP11N60 mosfet equivalent, n-channel mosfet.
hVDSS=600V, ID=11A hDrain-Source ON Resistance :
RDS(ON)(Max)=0.38ʃ @VGS=10V hQg(typ.)= 20nC
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage.
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplie.
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