KMB050N60PA transistor equivalent, n channel mos field effect transistor.
VDSS= 60V, ID= 50A Drain-Source ON Resistance : RDS(ON)=18m (Max.) @VGS = 10V
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15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.
such as automotive, DC/DC converters and a load switch in battery powered applications
E A
KMB050N60PA
N CHANNEL MOS FI.
It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications
E A
KMB050N60PA
N CHANNEL MOS FIELD EFFECT TRANSISTOR
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DIM MILLIMETERS _ 0.2 9.9 + A B C D E
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