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KMB054N40DB - N-Channel Trench MOSFET

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for Back-light Inverter and Power Supply.

Features

  • VDSS=40V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max. ) @ VGS=10V : RDS(ON)=11m (Max. ) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. A CD B H G FF J E K L N M DIM.

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Datasheet Details

Part number KMB054N40DB
Manufacturer KEC
File Size 815.54 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet KMB054N40DB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA KMB054N40DB N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES VDSS=40V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN O 0.1 MAX 123 O 1. GATE 2. DRAIN 3.
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