KMB054N40IA
Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply.
FEATURES
VDSS=40V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability.
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC@TC=25 Pulsed
Drain-Source-Diode Forward Current
@TC=25 Drain Power Dissipation
@Ta=25
(Note1) (Note2)
(Note1) (Note2)
VDSS VGSS
ID IDP IS
40 V
20 V
54 A
100 A
45 W
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Resistance, Junction to Case (Note1)
Rth JC
Thermal Resistance, Junction to Ambient (Note2) Rth JA
Note 1) Rth JC means that the infinite heat sink is mounted. Note 2)...
