KMB010P30QA datasheet, mosfet equivalent, KEC

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Features and benefits

VDSS=-30V, ID=-10A. Drain-Source ON Resistance. RDS(ON)=20m (Max.) @ VGS=-10V RDS(ON)=28m (Max.) @ VGS=-4.5V Super High Dense Cell Design MOSFET Maximum Ratings (Ta=25 U.

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack. FEATURES VDSS=-30V, ID=-10A. Drain-Source ON Resistance..

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