VDSS= 60V, ID= 50A Drain-Source ON Resistance : RDS(ON)=0.022 @VGS = 10V Qg(typ.) = 32nC Improved dv/dt capacity, high Ruggedness Maximum Junction Temperature Range (175 .

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based o.

KMB050N60PA

KMB054N40DA

KMB054N40DB

KMB054N40DC

KMB054N40IA

KMB054N45DA

KMB010P30QA

KMB012N30QA

KMB014P30QA

KMB030N30D

KMB035N40DB

KMB035N40DC

KMB060N40BA

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