KF5N65F transistor equivalent, n channel mos field effect transistor.
VDSS= 650V, ID= 5A Drain-Source ON Resistance : RDS(ON)=1.75 Qg(typ) = 14.5nC
(Max) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KF5N65P K.
This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mod.
Image gallery
TAGS