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KF5N60P - N-Channel MOSFET

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

  • VDSS= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.0 Qg(typ) = 12nC @VGS = 10V.

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Datasheet Details

Part number KF5N60P
Manufacturer KEC
File Size 92.21 KB
Description N-Channel MOSFET
Datasheet download datasheet KF5N60P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA KF5N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.0 Qg(typ) = 12nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL KF5N60P KF5N60F UNIT Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 4.5 4.5* 2.7 2.
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