KF5N25D transistor equivalent, n channel mos field effect transistor.
VDSS= 250V, ID= 4.4A Drain-Source ON Resistance : RDS(ON)(MAX)=1.1 @VGS = 10V Qg(typ) = 6nC
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.
FEATURES VDS.
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