KF5N50D transistor equivalent, n channel mos field effect transistor.
VDSS= 500V, ID= 4.3A Drain-Source ON Resistance : RDS(ON)=1.4 (Max) @VGS = 10V Qg(typ) = 12nC
H G F F
KF5N50D/DZ
N CHANNEL MOS FIELD EFFECT TRANSISTOR
A C
K D
L
B
J.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES
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