KF5N50F transistor equivalent, n channel mos field effect transistor.
VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12nC
D N
KF5N50P/F/PZ/FZ
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF5N50P, KF5N50PZ
A
O C F
E
G B.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES
VD.
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