VDSS= 600V, ID= 3.5A Drain-Source ON Resistance : RDS(ON)=2.0 Qg(typ) = 11nC (Max) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VD.

This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mod.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts