This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). SOT-323 1. GATE 2. SOURCE 3. DRAIN 1 3 2 FEATURE z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed z ESD p.

CJ1

CJ1012

CJ1012-G

CJ1117

CJ1G-CPU42P

CJ1G-CPU43P

CJ1G-CPU44P

CJ1G-CPU45P

CJ1H-CPU64H-R

CJ1H-CPU65H-R

CJ1H-CPU66H-R

CJ1H-CPU67H-R

CJ1M

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