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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2*2-6L-A Plastic-Encapsulate MOSFETS
CJLJF3117P P-Channel Power MOSFET
FEATURE Featuring a MOSFET and Schottky Diode Independent Pinout Privides Circuit Design Flexibility Low Profile (<0.8mm) for Easy Fit in Thin Environment High Current Schottky Diode
DFNWB2*2-6L-A
APPLICATIONS Optimized for Portable Applications like Cell Phones , Digital Cameras, Media Players, etc DC-DC Buck Circuits Li-ion Battery Applications Color Display and Camera Flash Regulators
MARKING:
front Tape Drawing (Unit : mm)
back
MOSFET MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
Continuous Drain Current
ID
-3.3
Power Dissipation
PD
0.
CJLJF3117P Datasheet
