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CJL3407 - P-Channel MOSFET

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Description

The CJL3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge.

This device is suitable for use as a load switch or in PWM applications.

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Datasheet Details

Part number CJL3407
Manufacturer JCET
File Size 760.14 KB
Description P-Channel MOSFET
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL3407 P-Channel Enhancement Mode Field Effect Transistor V(BR)DSS -30V RDS(on)MAX 60mΩ@-10 V 87mΩ@-4.5V ID -4.1A General Description The CJL3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. SOT-23-6L MARKING: R7 Equivalent Circuit PIN1 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID PD RθJA TJ Tstg Value -30 ±20 -4.1 350 357 150 -55~+150 Unit V V A mW ℃/W ℃ ℃ www.cj-elec.
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