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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETs
CJL2623 Dual P-Channel MOSFET
V(BR)DSS
-30 V
RDS(on)MAX
130mΩ@-10V 180mΩ@-4.5V
ID
-3 A
SOT-23-6L
FEATURE z TrenchFET Power MOSFET z Low Gate Charge z Low On-resistance z Surface Mount Package
MARKING:
6
APPLICATION z DC/DC converter z Load switch for portable devices z Commercial-industrial applications
Equivalent Circuit
1
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current (note 1)
IDM
Power Dissipation (note 2)
PD
Thermal Resistance from Junction to Ambient
RθJA
Junction Temperature
TJ
Storage Temperature
TSTG
Notes : 1. Pulse width limited by Max.
CJL2623 Datasheet
