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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL1206
V(BR)DSS
-12V
Dual P-Channel Power MOSFET
RDS(on)MAX
ID
45 mΩ@-4.5V
60 mΩ@-2.5V
-6A
90 mΩ@-1.8V
SOT-23-6L
FEATURE z TrenchFET Power MOSFET
MARKING
APPLICATION z Load Switch for Portable Devices z DC/DC Converter
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t≤10s) Junction Temperature Storage Temperature
VDS VGS ID IS PD RθJA TJ TSTG
Value -12 ±8 -6 -0.8 0.35 357 150 -50 ~+150
Unit V
A W ℃/W ℃
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