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CJL6602 - P-channel and N-channel Complementary MOSFETS

Description

and low gate charge.

power inverter and suitable for a multitude of applications.

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Datasheet Details

Part number CJL6602
Manufacturer JCET
File Size 1.17 MB
Description P-channel and N-channel Complementary MOSFETS
Datasheet download datasheet CJL6602 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL6602 P-channel and N-channel Complementary MOSFETS P-channel V(BR)DSS -30V RDS(on)MAX 135 mΩ@-10V  185mΩ@-4.5V 265mΩ@-2.5V ID -2.3A  N-channel V(BR)DSS 30V RDS(on)MAX 60mΩ@10V  75mΩ@4.5V 115mΩ@2.5V ID 3.4A  SOT-23-6L GENERAL DESCRIPTION The CJL6602 uses advanced trench technology to provide excellent RDS(on) and low gate charge. The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications. MARKING Equivalent Circuit L6602 Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS N-channel 30 Value P-channel -30 Unit V Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current (2) VGS ±12 ID 3.
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