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CJL6601 - P- & N-Channel MOSFET

Description

and low gate charge.

The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications.

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Datasheet Details

Part number CJL6601
Manufacturer JCET
File Size 109.34 KB
Description P- & N-Channel MOSFET
Datasheet download datasheet CJL6601 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL6601 P-channel and N-channel Complementary MOSFETS GENERAL DESCRIPTION The CJL6601 uses advanced trench technology to provide excellent RDS(on) and low gate charge. The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications. SOT-23-6L Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage N-channel VDS 30 P-channel -30 V Gate-Source Voltage VGS ±12 ±12 V Continuous Drain Current(1) ID 3.4 -2.3 A Pulsed Drain Current (2) IDM 30 -30 A Power Dissipation PD 0.35 0.
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