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CESD5V0D3 Datasheet Preview

CESD5V0D3 Datasheet

ESD Protection Diode

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
CESD5V0D3 ESD Protection Diode
SOD-323
DESCRIPTION
The CESD5V0D3 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
FEATURES
z Standoff Voltage:5.0 V
z Low Leakage
z Response Time is Typically < 1 ns
z ESD Rating of Class 3 (> 16 kV) Per Human Body Model
z IEC6100042 Level 4 ESD Protection
z These are PbFree Devices
Maximum Ratings @Ta=25
IEC6100042(ESD)
ESD Voltage
Parameter
Air
Contact
per human body model
Symbol
Limit
±15
±8.0
30
Total Power Dissipation on FR-5 Board (Note 1)
Thermal Resistance JunctiontoAmbient
PD
RΘJA
200
625
Lead Solder Temperature Maximum (10 Second Duration)
TL 260
Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only.
Functional operation above the recommended. Operating conditions is not implied. Extended exposure to
stresses above the recommended operating conditions may affect device reliability.
1. FR5 = 1.0 x 0.75 x 0.62 in.
Unit
KV
KV
mW
/W
B.Mar,2013




JCET

CESD5V0D3 Datasheet Preview

CESD5V0D3 Datasheet

ESD Protection Diode

No Preview Available !

ELECTRICAL CHARACTERISTICS (Ta= 25°C unless otherwise noted)
Symbol
IPP
VC
VRWM
IR
VBR
IT
IF
VF
Ppk
C
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Forward Current
Forward Voltage @ IF
Peak Power Dissipation
Max. Capacitance @VR=0 and f =1MHz
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types)
Device*
Device
Marking
VRWM
(V)
Max
IR (μA)
@ VRWM
Max
VBR (V)
@ IT(Note 2)
Min Max
VC
IT IPP(A) +
@IPP = 5 A
mA V
Max
VC (V)
@Max
I+
PP
Max
P+
pk
(W)
Max
CESD5V0D3
ZA
5.0
10
6.2 7.3 1.0
9.8
15 15.5 350
*Other voltages available upon request.
+Surge current waveform per Figure 6.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
C
(pF)
Typ
350
B.Mar,2013


Part Number CESD5V0D3
Description ESD Protection Diode
Maker JCET
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CESD5V0D3 Datasheet PDF






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