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CESD5V0AP Datasheet Preview

CESD5V0AP Datasheet

ESD Protection Diode

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
CESD5V0AP ESD Protection Diode
SOT-23
DESCRIPTION
The CESD5V0AP is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
FEATURES
z Standoff Voltage: 5.0 V
z Low Leakage
z Response Time is Typically < 1 ns
z ESD Rating of Class 3 (> 16 kV) Per Human Body Model
z IEC6100042 Level 4 ESD Protection
z These are PbFree Devices
1
1
3
2
Maximum Ratings @Ta=25
IEC6100042(ESD)
ESD voltage
Parameter
Air
Contact
per human body model
Symbol
Limit
±15
±8.0
16
Unit
KV
KV
Total power dissipation on FR-5 board (Note 1)
PD 225 mW
Thermal resistance junctiontoambient
RΘJA
556 /W
Lead solder temperature maximum (10 second duration)
TL 260
Junction and storage temperature range
Tj, Tstg
-55 ~ +150
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only.
Functional operation above the recommended. Operating conditions is not implied. Extended exposure to
stresses above the recommended operating conditions may affect device reliability.
Note 1. FR5 = 1.0 x 0.75 x 0.62 in.
B,Mar,2013




JCET

CESD5V0AP Datasheet Preview

CESD5V0AP Datasheet

ESD Protection Diode

No Preview Available !

ELECTRICAL CHARACTERISTICS (Ta= 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
IPP
VC
VRWM
IR
VBR
IT
IF
VF
Ppk
C
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Forward Current
Forward Voltage @ IF
Peak Power Dissipation
Max. Capacitance @VR=0 and f =1MHz
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types)
Device*
Device
Marking
VRWM (V)
Max
IR (μA)
@ VRWM
Max
VBR (V)
@ IT(Note 2)
VC
IT Max IPP + Ppk + (W)
@IPP =1 A
Min Max mA
V
A Max
CESD5V0AP
5M
5
10 6.2 7.3 1.0 9.8
12 300
*Other voltages available upon request.
+Surge current waveform per Figure 3
Note 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
C (pF)
Pin 1 to 3
Typ
110
B,Mar,2013


Part Number CESD5V0AP
Description ESD Protection Diode
Maker JCET
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