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CESD5V0D9 Datasheet Preview

CESD5V0D9 Datasheet

ESD Protection Diode

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-923 Plastic-Encapsulate Diodes
CESD5V0D9 ESD PROTECTION DIODE
DESCRIPTION
The CESD5V0D9 is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage,and fast response time
provide best in class protection on designs that are exposed to ESD.
SOD-923
FEATURES
Low Reverse Standoff Voltage: 5.0 V
Low Leakage Current
Response Time is Typically < 1 ns
IEC6100042 Level 4 ESD Protection
These are PbFree Devices
APPLICATIONS
Computers and peripherals
Communications systems
Audio and video equipment
High speed data lines
Parallel ports
MAXIMUM RATINGS (TA=25unless otherwise noted)
Parameter
Symbol
Limit
Unit
Electrostatic Discharge Voltage (IEC6100042 )(note1)
Air
±16
Contact
±16
per human body model
VESD
20
kV
per machine model
0.4
Total Power Dissipation on FR-5 Board (note 2)
Thermal Resistance from Junction to Ambient
PD
RΘJA
100
1250
mW
/W
Lead Solder Temperature Maximum (10 Second Duration)
TL 260
Junction Temperature
TJ 150
Storage Temperature Range
Tstg -55 ~ +150
Note: 1.Device stressed with ten non-repetitive ESD pulses.
2. FR5 = 1.0 x 0.75 x 0.62 in.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.Functional operation
above the Recommended.Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating
Conditions may affect device reliability.
A-1,Nov,2012




JCET

CESD5V0D9 Datasheet Preview

CESD5V0D9 Datasheet

ESD Protection Diode

No Preview Available !

ELECTRICAL PARAMETER
Symbol
Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM
IR
IT
VBR
IF
VF
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Test Current
Breakdown Voltage @ IT
Forward Current
Forward Voltage @ IF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted )
Device(1)
Device
Marking
VRWM (V)
Max
IR (μA)
@ VRWM
Max
VBR (V) (2)
@ IT=1mA
Min Max
VC(V)
@IPP(3)=5 A
Max
CESD5V0D9
B
5
1
6
8
15
(1)Other voltages available upon request.
(2)VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
(3) Non-repetitive current pulse 8/20s exponential decay waveform according to IEC 61000-4-5.
VF(V)
@IF=10mA
Max
0.9
C (pF)
@VR=0,f=1MHz
Typ
20
A-1,Nov,2012


Part Number CESD5V0D9
Description ESD Protection Diode
Maker JCET
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CESD5V0D9 Datasheet PDF






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