ISL73040SEH - Radiation Hardened Low-Side GaN FET Driver
Intersil (now Renesas)
Download the ISL73040SEH datasheet PDF.
This datasheet also covers the ISL70040SEH variant, as both devices belong to the same radiation hardened low-side gan fet driver family and are provided as variant models within a single manufacturer datasheet.
General Description
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2.
6 2.1 Absolute Maximum Ratings
Key Features
an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL70040SEH and ISL73040SEH inputs can withstand voltages up to 14.7V regardless of the VDD voltage. This allows the ISL70040SEH and ISL73040SEH inputs to be connected directly to most PWM controllers. The ISL70040SEH and ISL73040SEH split outputs offer the flexibility to adjust the turn-on and turn-off speed i.
Full PDF Text Transcription for ISL73040SEH (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
ISL73040SEH. For precise diagrams, and layout, please refer to the original PDF.
DATASHEET ISL70040SEH, ISL73040SEH Radiation Hardened Low-Side GaN FET Driver The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gall...
View more extracted text
L73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The drivers operate with a supply voltage from 4.5V to 13.2V and have both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL70040SEH and ISL73040SEH have a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs.
ISL73040SEH Datasheet
