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ISL73041SEH - Radiation Hardened 12V Half-Bridge GaN FET Driver

Description

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Features

  • Qualified to Renesas Rad Hard QML-V Equivalent Screening and QCI Flow (R34TB0001EU).
  • All screening and QCI is in accordance with MIL-PRF-38535L Class-V.
  • Up to 20V bootstrap voltage half-bridge driver.
  • Programmable 4.5V to 5.5V gate drive voltage.
  • Single tri-level PWM input control.
  • Separate source and sink driver outputs.
  • High-side peak drive: 2A Sourcing, 4A Sinking.
  • Low-side peak drive: 4A Sourcing, 8A Sinking.
  • High and low side programmable de.

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Full PDF Text Transcription (Reference)

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ISL73041SEH Radiation Hardened 12V Half-Bridge GaN FET Driver Datasheet The ISL73041SEH is a Radiation Hardened PWM input 12V Half Bridge GaN FET Driver designed to drive low rDS(ON) Gallium Nitride FETs for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and strong gate drive current provide a compact and robust GaN FET half-bridge driver. The ISL73041SEH can interface directly to the ISL73847SEH dual-phase PWM buck controller to create a high-efficiency point-of-load regulator to power many of the latest low voltage high current FPGA and DSP digital core rails.
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