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ISL73024SEH - 7.5A Enhancement Mode GaN Power Transistor

Download the ISL73024SEH datasheet PDF. This datasheet also covers the ISL70024SEH variant, as both devices belong to the same 7.5a enhancement mode gan power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

3.

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Key Features

  • Very low rDS(ON) 45mΩ (typical).
  • Ultra low total gate charge 2.5nC (typical).
  • SEE hardness (see SEE report for details).
  • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV.
  • cm2/mg(Si).
  • ISL70024SEH radiation acceptance (see TID report).
  • High dose rate (50-300rad(Si)/s): 100krad(Si).
  • Low dose rate (0.01rad(Si)/s): 75krad(Si).
  • ISL73024SEH radiation acceptance (see TID report).
  • Low dose rate (0.01rad(Si)/s): 75krad(Si).
  • Ultra small h.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ISL70024SEH-Intersil.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by Intersil (now Renesas)

Part Number Description
ISL73020SEH 65A Enhancement Mode GaN Power Transistors
ISL73023SEH 60A Enhancement Mode GaN Power Transistor
ISL73002SEH Radiation Hardened and SEE Hardened 12A Synchronous Buck Regulator
ISL73005SEH Radiation Hardened Dual Output 3A Synchronous Buck and LDO Regulator
ISL73006SLH 1A Point-of-Load Regulator
ISL73007SEH 3A Point-of-Load Regulator
ISL73033SLHM Radiation Hardened Driver-GaN Power Stage
ISL73040SEH Radiation Hardened Low-Side GaN FET Driver
ISL73041SEH Radiation Hardened 12V Half-Bridge GaN FET Driver
ISL73051ASEH Ultra-Low Dropout Regulator

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ISL70024SEH, ISL73024SEH 200V, 7.5A Enhancement Mode GaN Power Transistor Datasheet The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size.