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PD- 95188A
IRG4PH40UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE Features
C
UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry standard TO-247AC package Lead-Free
Benefits
Higher switching frequency capability than competitive IGBTs
Highest efficiency available HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require less/no snubbing
G
E
n-channel
VCES = 1200V VCE(on) typ. = 2.
IRG4PH40UDPbF Datasheet
