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IRG4PH50S - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • Industry standard TO-247AC package C Standard Speed IGBT VCES =1200V G E VCE(on) typ. = 1.47V @VGE = 15V, IC = 33A n-channel Benefits.
  • Generation 4 IGBT's offer highest efficiency available.
  • IGBT's optimized for specified.

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Datasheet Details

Part number IRG4PH50S
Manufacturer IRF
File Size 130.71 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRG4PH50S Datasheet

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Full PDF Text Transcription

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PD -91712A IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C Standard Speed IGBT VCES =1200V G E VCE(on) typ. = 1.
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