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IRG4PH50UD - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode.
  • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations.
  • IGBT co-packaged with.

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Datasheet Details

Part number IRG4PH50UD
Manufacturer IRF
File Size 229.83 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRG4PH50UD Datasheet

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Full PDF Text Transcription

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PD 91573A IRG4PH50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package C UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ. = 2.78V @VGE = 15V, IC = 24A n-cha nn el Benefits • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimized for performance with IGBT's .
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