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IRG4PH40UPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode.
  • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations.
  • Optimized for power conversion; SMPS, UPS and welding.
  • Industry standard TO-247AC package.
  • Lead-Free Benefits.
  • Higher switching frequency capability than competitive IGBTs.
  • Highest efficiency available.
  • Much low.

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PD - 95187 IRG4PH40UPbF INSULATEDGATEBIPOLARTRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and welding • Industry standard TO-247AC package • Lead-Free Benefits • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • Much lower conduction losses than MOSFETs • More efficient than short circuit rated IGBTs C G E n-channel Ultra Fast Speed IGBT VCES = 1200V VCE(on) typ. = 2.
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