Full PDF Text Transcription for IRG41BC30UD (Reference)
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IRG41BC30UD. For precise diagrams, and layout, please refer to the original PDF.
PD91753A IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsin...
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2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Tighter parameter distribution • Industry standard Isolated TO-220 FullpakTM outline C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.
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