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IRG4BC10SD-L - (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Extremely low voltage drop 1.1Vtyp. @ 2A.
  • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
  • Very Tight Vce(on) distribution.
  • IGBT co-packaged with.

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Other Datasheets by International Rectifier (now Infineon)

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IRG4BC10SD-LPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SD-S (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SD-SPBF INSULATED GATE BIPOLAR TRANSISTOR
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Full PDF Text Transcription

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www.DataSheet4U.com PD - 94255 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak & TO-262 packages C IRG4BC10SD-S IRG4BC10SD-L Standard Speed CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A n-ch an nel Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's .
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