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IRG4BC10SD-S - (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR

Download the IRG4BC10SD-S datasheet PDF. This datasheet also covers the IRG4BC10SD-L variant, as both devices belong to the same (irg4bc10sd-l/-s) insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Extremely low voltage drop 1.1Vtyp. @ 2A.
  • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
  • Very Tight Vce(on) distribution.
  • IGBT co-packaged with.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRG4BC10SD-L_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG4BC10SD-SPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SD-L (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SD-LPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10S INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription

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www.DataSheet4U.com PD - 94255 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak & TO-262 packages C IRG4BC10SD-S IRG4BC10SD-L Standard Speed CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A n-ch an nel Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's .
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