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IRG4BC10SDPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • C Standard Speed CoPack IGBT VCES = 600V.
  • Extremely low voltage drop 1.1Vtyp. @ 2A.
  • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
  • Very Tight Vce(on) distribution.
  • IGBT co-packaged with.

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Other Datasheets by International Rectifier (now Infineon)

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IRG4BC10SD-L (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
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Full PDF Text Transcription

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www.DataSheet4U.com PD -94904 IRG4BC10SDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Standard Speed CoPack IGBT VCES = 600V • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package • Lead-Free • Generation 4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs .
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