Datasheet4U Logo Datasheet4U.com

IRFZ24V - Power MOSFET

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • .139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) M B A M 3X 0.55 (.02 2) 0.46 (.01 8) 0 .3 6 (.01 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y.

📥 Download Datasheet

Datasheet preview – IRFZ24V

📁 Similar Datasheet

  • IRFZ24 - Power MOSFET (Fairchild Semiconductor)
  • IRFZ24 - Power MOSFET (Vishay)
  • IRFZ24A - ADVANCED POWER MOSFET (Fairchild Semiconductor)
  • IRFZ24L - Power MOSFET (Vishay)
  • IRFZ24N - N-channel enhancement mode TrenchMOS transistor (NXP)
  • IRFZ24N - Power MOSFET (ART CHIP)
  • IRFZ24N - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRFZ24NL - Power MOSFET (TRANSYS)
  • IRFZ24NLPbF - N-Channel MOSFET (INCHANGE)
  • IRFZ24NS - Power MOSFET (TRANSYS)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PD - 94156 IRFZ24V HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l l D VDSS = 60V RDS(on) = 60mΩ G S ID = 17A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Published: |