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IRFZ24V Power MOSFET

IRFZ24V Description

www.DataSheet4U.com PD - 94156 IRFZ24V HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Opera.
l l D VDSS = 60V RDS(on) = 60mΩ G S ID = 17A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques t.

IRFZ24V Features

* .139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1

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Power MOSFET International Rectifier
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