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IRFZ24VSPbF - HEXFET Power MOSFET

Download the IRFZ24VSPbF datasheet PDF. This datasheet also covers the IRFZ24VLPbF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

www.DataSheet4U.com D2 Pak IRFZ24VS TO-262 IRFZ24VL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V‡ Continuous Drain Current, VGS @ 10V‡ Pulsed Drain Current ‡ Power Dissipation Linear Derating Fa

Features

  • ters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT COD E 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " N ote: "P " in as s em bly lin e po s itio n in dicates "L ead-F r ee" IN T E R N AT IO N AL R E C T IF IE R L OGO AS S E M B L Y L O T CO D E P AR T N U M B E R F 5 30 S D AT E C O D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L OR IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L OT COD E P AR T N U M B E R F.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFZ24VLPbF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFZ24 Power MOSFET Fairchild Semiconductor
IRFZ24 Power MOSFET Vishay
IRFZ24A ADVANCED POWER MOSFET Fairchild Semiconductor
IRFZ24L Power MOSFET Vishay
IRFZ24N N-channel enhancement mode TrenchMOS transistor NXP

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFZ24VS HEXFET Power MOSFET
IRFZ24V Power MOSFET
IRFZ24VL HEXFET Power MOSFET
IRFZ24VLPbF HEXFET Power MOSFET
IRFZ24 Power MOSFET

Full PDF Text Transcription

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PD - 95524 l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET® Power MOSFET D IRFZ24VSPbF IRFZ24VLPbF VDSS = 60V RDS(on) = 60mΩ G S ID = 17A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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