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IRFZ24VS - HEXFET Power MOSFET

Download the IRFZ24VS datasheet PDF. This datasheet also covers the IRFZ24VL variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2 4 .6 9 (.18 5) 4 .2 0 (.16 5) -B1.3 2 (.05 2) 1.2 2 (.04 8) 10 .1 6 (.4 00 ) R E F. 6.47 (.2 55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0.9 3 (.0 37 ) 0.6 9 (.0 27 ) 0.25 (.0 10 ) M B A M 0.55 (.0 22) 0.46 (.0 18).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFZ24VL_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFZ24 Power MOSFET Fairchild Semiconductor
IRFZ24 Power MOSFET Vishay
IRFZ24A ADVANCED POWER MOSFET Fairchild Semiconductor
IRFZ24L Power MOSFET Vishay
IRFZ24N N-channel enhancement mode TrenchMOS transistor NXP

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFZ24VSPbF HEXFET Power MOSFET
IRFZ24V Power MOSFET
IRFZ24VL HEXFET Power MOSFET
IRFZ24VLPbF HEXFET Power MOSFET
IRFZ24 Power MOSFET

Full PDF Text Transcription

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PD - 94182 IRFZ24VS IRFZ24VL HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS(on) = 60mΩ G S ID = 17A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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