IRFZ24N
Description
Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
Max.
ID@ Tc=25- ID@ Tc=100- IDM PD@ TC=25-
Continuous Drain Current, VGS @ 10V 17
Continuous Drain Current, VGS @ 10V 12
Pulsed Drain Current æ
Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy...
