AUIRLR2908 datasheet, mosfet equivalent, International Rectifier

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datasheet Download (Size : 238.72KB)

Features and benefits

l Advanced Planar Technology l Logic-Level Gate Drive l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Al.

Application

this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistan.

Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and rug.

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