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AUIRLR2905 Datasheet Power MOSFET

Manufacturer: Infineon

Overview:   AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905.

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

S G D-Pak AUIRLR2905 G Gate D Drain S GD I-Pak AUIRLU2905 S Source Base part number AUIRLU2905 AUIRLR2905  Package T

Key Features

  • Advanced Planar Technology.
  • Logic Level Gate Drive.
  • Low On-Resistance.
  • Dynamic dV/dT Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   VDSS RDS(on) ID D HEXFET® Power MOSFET 55V max. 27m 42A D.

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