(V) 100 10μs 100μs 10 1ms TC = 25°C STJing=le 175°C Pulse 1 10ms A 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltag.

this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.

AUIRLR2905Z

AUIRLR2908

AUIRLR2703

AUIRLR014N

AUIRLR024N

AUIRLR024Z

AUIRLR120N

AUIRLR3105

AUIRLR3110Z

AUIRLR3114Z

AUIRLR3410

AUIRLR3636

AUIRLR3705Z

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