ent (A) 1000 100 10 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us 100us 1ms 1 10ms TC TJ = = 25 ° C 175 ° C Single Pulse 0.1 1 10 100 VDS , Drain-to-Source .

this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.

AUIRLR024N

AUIRLR024Z

AUIRLR120N

AUIRLR2703

AUIRLR2905

AUIRLR2905Z

AUIRLR2908

AUIRLR3105

AUIRLR3110Z

AUIRLR3114Z

AUIRLR3410

AUIRLR3636

AUIRLR3705Z

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts