AUIRLR120N mosfet equivalent, power mosfet.
* Advanced Planar Technology
* Logic Level Gate Drive
* Low On-Resistance
* Dynamic dV/dT Rating
* 175°C Operating Temperature
* Fast Switching
this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.
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