AUIRLR120N mosfet equivalent, power mosfet.
°C
I D , Drain Current (A)
10 100µs
1ms 1 10ms
1
0.1 0.4 0.6 0.8 1.0
VGS = 0V
1.2
A
0.1 1
TC = 25°C TJ = 175°C Single Pulse
10 100
1.4
1000
A
VSD , Source-to.
this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.
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