AUIRFP4110 datasheet, mosfet equivalent, International Rectifier

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Features and benefits

*Advanced Process Technology
*Ultra Low On-Resistance
*Enhanced dV/dT and dI/dT capability
*175°C Operating Temperature
*Fast Switching
*Rep.

Application

this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. Add.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast.

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