AUIRFP064N mosfet equivalent, power mosfet.
HEXFET® Power MOSFET
D
Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Ava.
this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per.
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedize.
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