Datasheet4U Logo Datasheet4U.com

AUIRFP064N - Power MOSFET

Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.

Features

  • HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS RDS(on) max. 55V 0.008Ω 110Ag G S ID D.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFP2602 Power MOSFET Infineon
AUIRFP4310Z Power MOSFET Infineon
AUIRFP4568 Power MOSFET Infineon
AUIRF1010EZ Power MOSFET Infineon
AUIRF1010EZL Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFP2602 Power MOSFET
AUIRFP2907 Power MOSFET
AUIRFP2907Z Power MOSFET
AUIRFP4004 Power MOSFET
AUIRFP4110 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE PD - 96375 AUIRFP064N l l l l l l l l l Features HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) max. 55V 0.008Ω 110Ag G S ID D Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.
Published: |