AUIRFP4409 datasheet, mosfet equivalent, International Rectifier

Features and benefits

*Advanced Process Technology
*Low On-Resistance
*175°C Operating Temperature
*Fast Switching
*Repetitive Avalanche Allowed up to Tjmax
*Lead.

Application

this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. Thi.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design th.

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